A 45nm 1Gb 1.8V phase-change memory

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 53, Issue , 2010, Pages 270-271

  Villa, Corrado ^a   Mills, Duane ^b   Barkley, Gerald ^b   Giduturi, Hari ^b   Schippers, Stefan ^a   Vimercati, Daniele ^a  

^a Numonyx   (Italy)

^b Numonyx   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE TECHNOLOGIES; CHALCOGENIDE MATERIALS; DISRUPTIVE TECHNOLOGY; ELECTRICAL RESISTIVITY; FLOATING-GATE FLASH; FLOATING-GATES; MARKET REQUIREMENTS; MEMORY SYSTEMS; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY TECHNOLOGY; NOVEL APPLICATIONS; PHASE CHANGES; PHASE-CHANGE MEMORY TECHNOLOGIES; READ-WHILE-WRITE; STABLE STATE; WIRELESS MARKET;

AMORPHOUS MATERIALS; COMMERCE; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC CONDUCTIVITY; FLASH MEMORY; GERMANIUM; PULSE CODE MODULATION; TECHNOLOGY; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 77952202326     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2010.5433916     Document Type: Conference Paper

References (3)

1. R. Bez, et al. "Introduction to flash memory", Proceedings of the IEEE, vol. 91, no. 4, pp. 489-502, April 2003.
2. R. Bez and G. Atwood, "Chalcogenide phase change memory: scalable NVM for next decade?", NVSMW06., pp. 12-15, 2006
3. G. Servalli, "A 45nm Generation Phase Change Memory Technology", IEDM 2009, session number 5.7.