Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction

Applied Physics Letters

Volumn 79, Issue 27, 2001, Pages 4586-4588

  Liu, Y ^a   Rang, Z L ^a   Fung, A K ^a   Cai, C ^a   Ruden, P P ^a   Nathan, M I ^a   Shtrikman, H ^b  

^a University of Minnesota   (United States)

^b WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035981097     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1427753     Document Type: Article

References (13)

1. G. Alt and P. Quadflieg, Phys. Status Solidi 25, 323 (1968).
2. T. F. Kuech, R. T. Collins, D. L. Smith, and C. Mailhiot, J. Appl. Phys. 67, 2650 (1990).
3. R. G. Beck, M. A. Eriksson, R. M. Westervelt, K. D. Maranowski, and A. C. Gossard, Semicond. Sci. Technol. 13, A83 (1998).
4. E. A. Khoo, A. S. Pabla, J. Woodhead, J. P. R. David, R. Grey, and G. J. Rees, IEE Proc.: Optoelectron. 146, 62 (1999).
5. A. K. Fung, J. D. Albrecht, M. I. Nathan, P. P. Ruden, and H. Shtrikman, J. Appl. Phys. 84, 3741 (1998).
6. D. Lancefield, A. R. Adams, and B. J. Gunney, Appl. Phys. Lett. 45, 1121 (1984).
7. T. Suski, E. Litwin-Staszewska, P. Winiewski, L. Dmowski, W. H. Zhuang, G. B. Liang, D. Z. Sun, and Y. P. Zhen, J. Appl. Phys. 63, 2307 (1988).
8. T. Suski, P. Winiewski, E. Litwin-Staszewska, J. Kossut, Z. Wilamouwski, T. Dietl, K. Witek, K. Ploog, and J. Knecht, Semicond. Sci. Technol. 5, 261 (1990).
9. F. Bosc, J. Sicart, and J. L. Robert, J. Appl. Phys. 85, 6520 (1999).
10. J. F. Nye, Physical Properties of Crystals (Oxford University, Oxford, 1957).
11. W. A. Brantley, J. Appl. Phys. 44, 534 (1973).
12. S. Adachi, J. Appl. Phys. 58, R1 (1985).
13. S. Gehrsitz, H. Sigg, N. Herres, K. Bachem, K. Köhler, and F. K. Reinhart, Phys. Rev. B 60, 11601 (1999).