Stress-related hydrogen degradation of 0.1-μm InP HEMTs and GaAs PHEMTs

IEEE Transactions on Electron Devices

Volumn 53, Issue 6, 2006, Pages 1289-1293

  Blanchard, Roxann R ^a,b   del Alamo, J A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b ANALOG DEVICES INC   (United States)

Author keywords

GaAs; High electron mobility transitor (HEMT); Hydrogen; InP; Pseudomorphic high electron mobility transitor (PHEMT); Reliability

Indexed keywords

DEGRADATION; HYDROGEN; PIEZOELECTRICITY; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THRESHOLD VOLTAGE;

PSEUDOMORPHIC HIGH-ELECTRON MOBILITY TRANSISTOR (PHEMT); STRAINED-CHANNEL; STRESS-RELATED PHENOMENA;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33744796836     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.873882     Document Type: Article

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