Numerical modeling of low frequency noise in ultrathin oxide MOSFETs

AIP Conference Proceedings

Volumn 1129, Issue , 2009, Pages 285-290

  Martinez, F ^a   Armand, J ^a   Valenza, M ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

Green's function; Low frequency noise; MOSFET; Thin oxide

Indexed keywords

EID: 67650487931     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3140452     Document Type: Conference Paper

References (5)

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2. G. Ghibaudo, "A simple derivation of Reimbold's drain current spectrum formula for flicker noise in MOSFFTs," Solid-State Electronics,vol. 30, no. 10, pp. 1037-1038, Oct. 1987.
3. Fan-Chi Hou, Gijs Bosman, Mark F, "Simulation of trapping noise in submicron n-channel MOSFFTs, Electron Devices, IEEE Trans, on, Vol.50, Iss.3, pp :846-852.
4. M. Marin, J.C. Vildeuil, B. Tavel, B. Duriez, F. Arnaud, M. Stolk, M. Woo ,"Can ;l/f noise in MOSFFTs be reduced by gate oxide and channel optimization", ICNF 2005, September 2005.
5. C.Guerin, V.Huard, A. Bravaix, M.Denais, "Impact of hot carrier degradation modes on I/O n MOSFFTs aging prediction", IEEE IIRW 2006, pp.63-67.