Simultaneous extraction of locations and energies of two independent traps in gate oxide from four-level random telegraph signal noise

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2606-2609

  Yang, Seungwon ^a   Lee, Hochul ^a   Shin, Hyungcheol ^a  

^a Seoul National University   (South Korea)

Author keywords

Complex; Depth; Location; MOSFET; RTS; Trap; Trap energy

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; LOCATION; SIGNAL PROCESSING; TELEGRAPH;

COMPLEX; DEPTH; MOSFET; RTS; TRAP; TRAP ENERGY;

CARRIER TELEGRAPH;

EID: 54249086200     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2606     Document Type: Article

References (8)

1. M. J. Kirton and M. J. Uren: Adv. Phys. 38 (1989) 367.
2. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng: IEEE Electron Device Lett. 11 (1990) 90.
3. Z. Celik-Butler: IEE Proc.-Circuits Devices Syst. 149 (2002) 23.
4. Z. Shi, J. P. Mieville, and M. Dutoit: IEEE Trans. Electron Devices 41 (1994) 1161.
5. H. C. Lee, Y. C. Yoon, S. Cho, and H. Shin: IEICE Trans. Electron. E90-C (2007) 968.
6. C. Leyris, F. Martinez, M. Valenza, A. Hoffmann, J. C. Vildeuil, and F. Roy: Proc. Solid-State Circuits Conf., 2006, p. 376.
7. Z. Celik-Butler, P. Vasina, and N. V. Amarasinghe: IEEE Trans. Electron Devices 47 (2000) 646.
8. Z. Celik-Butler and N. V. Amarasinghe: Solid-State Electron. 44 (2000) 1013.