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Volumn 518, Issue 22, 2010, Pages 6531-6536
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Thickness limit of BaTiO3 thin film capacitors grown on SUS substrates using aerosol deposition method
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Author keywords
Aerosol deposition method; BaTiO3; Leakage current mechanism; Thin film
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Indexed keywords
AEROSOL DEPOSITION METHOD;
BATIO3;
CURRENT MECHANISMS;
DIELECTRIC THICKNESS;
DOMINANT MECHANISM;
FIELD CONCENTRATIONS;
FOWLER-NORDHEIM TUNNELING;
HARD SUBSTRATE;
HIGH ELECTRIC FIELDS;
INTERFACE EFFECT;
INTERFACE ROUGHNESS;
KEY FACTORS;
LEAKAGE CURRENT MECHANISM;
POOLE-FRENKEL EMISSION;
SCHOTTKY EMISSIONS;
THICKNESS DEPENDENCE;
THICKNESS OF FILMS;
THIN-FILM CAPACITORS;
ATMOSPHERIC AEROSOLS;
BARIUM COMPOUNDS;
DEPOSITION;
DIELECTRIC PROPERTIES;
ELECTRIC FIELDS;
OXYGEN;
OXYGEN VACANCIES;
RESPIRATORY MECHANICS;
STAINLESS STEEL;
SUBSTRATES;
THIN FILM CIRCUITS;
THIN FILMS;
VAPOR DEPOSITION;
LEAKAGE CURRENTS;
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EID: 77956059368
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.03.159 Document Type: Conference Paper |
Times cited : (21)
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References (18)
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