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Volumn 518, Issue 22, 2010, Pages 6531-6536

Thickness limit of BaTiO3 thin film capacitors grown on SUS substrates using aerosol deposition method

Author keywords

Aerosol deposition method; BaTiO3; Leakage current mechanism; Thin film

Indexed keywords

AEROSOL DEPOSITION METHOD; BATIO3; CURRENT MECHANISMS; DIELECTRIC THICKNESS; DOMINANT MECHANISM; FIELD CONCENTRATIONS; FOWLER-NORDHEIM TUNNELING; HARD SUBSTRATE; HIGH ELECTRIC FIELDS; INTERFACE EFFECT; INTERFACE ROUGHNESS; KEY FACTORS; LEAKAGE CURRENT MECHANISM; POOLE-FRENKEL EMISSION; SCHOTTKY EMISSIONS; THICKNESS DEPENDENCE; THICKNESS OF FILMS; THIN-FILM CAPACITORS;

EID: 77956059368     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.03.159     Document Type: Conference Paper
Times cited : (21)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.