Influences of the [(Ba,Sr)TiO3]-modified RuO2 interface on the dielectric constant and current-voltage characteristics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 928-934

  Jeon, Min Seok ^a   Choi, Duck Kyun ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001068943     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)

1. K. Takemura, T. Sakuma, and Y. Miyasaka, Appl. Phys. Lett. 64, 2967 (1994).
2. T. Kuroiwa, Jpn. J. Appl. Phys. 33, 5187 (1994).
3. K. Takemura, Jpn. J. Appl. Phys. 34, 5224 (1995).
4. C. S. Hwang, Appl. Phys. Lett. 67, 2819 (1995).
5. R. G. Vadimsky, R. P. Frankenhal, and K. E. Thompson, J. Electrochem. Soc. 126, 2017 (1979).
6. E. Kolawa, F. C. T. So, E. T-S. Pan, and M-A. Nicolet, Appl. Phys. Lett. 50, 854 (1987).
7. L. Krusin-Elbaum, M. Wittmer, and K. S. Yee, Appl. Phys. Lett. 50, 1879 (1987).
8. S. Saito and K. Kuramasu, Jpn. J. Appl. Phys. 31, 135 (1992).
9. J. F. Scott et al., Proceedings of the Eighth IEEE International Symposium on Application of Ferroelectrics, Greenville, S. C., August 1992 (unpublished), p. 356.
10. Y. Shimada, Jpn. J. Appl. Phys. 35, 140 (1996).
11. W. Y. Hsu, Appl. Phys. Lett. 66, 2975 (1995).
12. C. H. Hwang and B. T. Lee, Korean J. Ceram. 2, 95 (1996).
13. W. E. Bell and M. Tagami, J. Phys. Chem. 67, 2432 (1963).
14. J. F. Scott, Integr. Ferroelectr. 9, 1 (1995).
15. H. B. Michaelson, J. Appl. Phys. 48, 4129 (1977).
16. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap. 5.
17. M. Tomkiewicz, Y. S. Huang, and F. H. Pollak, J. Electrochem. Soc. 7, 1514 (1983).