Experimental and theoretical explanation for the orientation dependence gate-induced drain leakage in scaled MOSFETs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 263-264

  Solomon, P M ^a   Laux, S E ^a   Shi, L ^a   Cai, J ^a   Haensch, W ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTION INTEGRALS; CHANNEL DIRECTIONS; COMPLEX BAND STRUCTURES; GATE-INDUCED DRAIN LEAKAGE; LIGHT HOLES; MOSFETS; ORIENTATION DEPENDENCE; SI WAFER; THEORETICAL EXPLANATION; TUNNELING CURRENT;

MOSFET DEVICES; SILICON WAFERS; TUNNELING (EXCAVATION); WIND TUNNELS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 76549128962     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354924     Document Type: Conference Paper

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