Direct evidence for a Cu-enriched region at the boundary between Cu 6Sn5 and Cu3Sn during Cu/Sn reaction

Scripta Materialia

Volumn 63, Issue 2, 2010, Pages 258-260

  Chung, C Key ^a,c   Duh, Jenq Gong ^b   Kao, C R ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c Intel Microelectronics Asia Ltd   (Taiwan)

Author keywords

Cu enriched regions; Dominant mechanisms; Early stage reflow soldering; Growing Cu 6Sn5 and Cu3Sn

Indexed keywords

BOUNDARY DIFFUSION; CU ATOMS; CU-ENRICHED REGIONS; DOMINANT MECHANISM; EARLY STAGE REFLOW SOLDERING; GROWING CU 6SN5 AND CU3SN; LARGE LATTICE MISMATCH; SOLDERING REACTIONS; THIN LAYERS;

FLIP CHIP DEVICES; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LATTICE MISMATCH; SOLDERING;

TIN;

EID: 77955921020     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2010.04.011     Document Type: Article

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