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Volumn 4218, Issue , 2000, Pages 19-30

The time dependence of point defect behavior near the growth interface in Cz-Si

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; INTERFACES (MATERIALS); POINT DEFECTS; SINGLE CRYSTALS; THERMAL EFFECTS;

EID: 0034447765     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (4)

References (12)
  • 5
    • 4244078187 scopus 로고    scopus 로고
    • H.R. Huff, U. Gösele and H. Tsuya, Editors, The Electrochemical Society Proceedings Series, Pennington, NJ
    • B.M. Park, in Silicon Materials Science and Technology: Semiconductor Silicon 1998, H.R. Huff, U. Gösele and H. Tsuya, Editors, PV 98-1, p.515, The Electrochemical Society Proceedings Series, Pennington, NJ (1998).
    • (1998) Silicon Materials Science and Technology: Semiconductor Silicon 1998 , vol.PV 98-1 , pp. 515
    • Park, B.M.1
  • 12
    • 0343754760 scopus 로고    scopus 로고
    • H.R. Huff, U. Gösele and H. Tsuya, Editors,The Electrochemical Society Proceedings Series, Pennington, NJ
    • T. Iwasaki, Y. Tsumori, K. Nakai and H. Haga, in Semiconductor Silicon 1994, H.R. Huff, U. Gösele and H. Tsuya, Editors, PV 94-10, p.744, The Electrochemical Society Proceedings Series, Pennington, NJ (1998).
    • (1998) Semiconductor Silicon 1994 , vol.PV 94-10 , pp. 744
    • Iwasaki, T.1    Tsumori, Y.2    Nakai, K.3    Haga, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.