Micro-fluctuation of growth-rate and grown-in defect distribution in CZ-Si

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4218, Issue , 2000, Pages 54-63

  Hasebe, Masami ^a   Fukuda, Jun ^a   Iwasaki, Toshio ^a   Harada, Hirofumi ^a   Tanaka, Masahiro ^a  

^a NSC Electron Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; MATHEMATICAL MODELS; SURFACE PROPERTIES; THERMAL EFFECTS;

GROWN-IN DEFECTS;

SILICON WAFERS;

EID: 0034449964     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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