A lattice kinetic Monte Carlo study of void morphological evolution during silicon crystal growth

Molecular Simulation

Volumn 33, Issue 9-10, 2007, Pages 733-745

  Dai, J ^a   Seider, W D ^a   Sinno, T ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

Lattice kinetic Monte Carlo; Oxygen; Oxygen vacancy complexes; Silicon; Vacancy aggregation

Indexed keywords

MONTE CARLO METHODS; MORPHOLOGY; OXYGEN; SILICON;

LATTICE KINETIC MONTE CARLO; OXYGEN-VACANCY COMPLEXES; VACANCY AGGREGATION;

CRYSTAL GROWTH;

EID: 34548308908     PISSN: 08927022     EISSN: 10290435     Source Type: Journal    
DOI: 10.1080/08927020701310915     Document Type: Conference Paper

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