Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulation

Journal of Applied Physics

Volumn 108, Issue 3, 2010, Pages

  Kumar, S Bala ^a   Jalil, M B A ^a   Tan, S G ^b   Liang, Gengchiau ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ARMCHAIR GRAPHENE NANORIBBONS; BANDGAP MODULATION; CONDUCTANCE MODULATIONS; EDGE ROUGHNESS; FERMI FUNCTIONS; FERROMAGNETIC LEADS; GRAPHENE NANO-RIBBON; HIGHER TEMPERATURES; LANDAU LEVELS; MAGNETIC SENSITIVITY; MAGNETO-RESISTIVE EFFECT; MAGNETORESISTIVE; METALLIC STATE; MR RATIO; PERPENDICULAR MAGNETIC FIELDS; SOURCE-DRAIN; SPIN-VALVES; SUB-BANDS;

ELECTRONIC PROPERTIES; ENERGY GAP; GRAPHENE; HUBBARD MODEL; MAGNETIC FIELDS; OLIGOMERS; OPTIMIZATION;

MODULATION;

EID: 77955900443     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3457353     Document Type: Article

References (45)

1. A. K. Geim and K. S. Novoselov, Nature Mater. NMAACR 1476-1122 6, 183 (2007). 10.1038/nmat1849 (Pubitemid 46353764)
2. B. Obradovic, R. Kotlyar, F. Heinz, P. Matagne, T. Rakshit, D. Nikonov, M. D. Giles, and M. A. Stettler, Appl. Phys. Lett. APPLAB 0003-6951 88, 142102 (2006). 10.1063/1.2191420 (Pubitemid 43731476)
3. C. Tke, P. E. Lammert, V. H. Crespi, and J. K. Jain, Phys. Rev. B PLRBAQ 0556-2805 74, 235417 (2006). 10.1103/PhysRevB.74.235417 (Pubitemid 44907673)
4. A. F. Morpurgo, Nature (London) NATUAS 0028-0836 462, 170 (2009). 10.1038/462170a
5. M. I. Katsnelson, K. S. Novoselov, and A. K. Geim, Nat. Phys. ZZZZZZ 1745-2473 2, 620 2006. 10.1038/nphys384 (Pubitemid 44328348)
6. V. V. Cheianov, V. Fal'ko, and B. L. Altshuler, Science SCIEAS 0036-8075 315, 1252 (2007). 10.1126/science.1138020 (Pubitemid 46364258)
7. E. V. Castro, K. S. Novoselov, S. V. Morozov, N. M. R. Peres, J. M. B. Lopes dos Santos, J. Nilsson, F. Guinea, A. K. Geim, and A. H. Castro Neto, Phys. Rev. Lett. PRLTAO 0031-9007 99, 216802 (2007). 10.1103/PhysRevLett.99. 216802 (Pubitemid 350137173)
8. E. McCann and V. I. Fal'ko, Phys. Rev. Lett. PRLTAO 0031-9007 96, 086805 (2006). 10.1103/PhysRevLett.96.086805 (Pubitemid 43334272)
9. Q. W. Shi, Z. F. Wang, J. Chen, H. X. Zheng, Q. Li, X. Wang, J. Yang, and J. G. Hou, arXiv:cond-mat/0611604V1 (unpublished).
10. G.-C. Liang, N. Neophytos, D. Nikonov, and M. Lundstrom, IEEE Trans. Electron Devices IETDAI 0018-9383 54, 677 (2007). 10.1109/TED.2007.891872 (Pubitemid 46563359)
11. G. Fiori and G. Iannaccone, IEEE Electron Device Lett. EDLEDZ 0741-3106 28, 760 (2007). 10.1109/LED.2007.901680 (Pubitemid 47243564)
12. K. T. Lam, C. Lee, and G. Liang, Appl. Phys. Lett. APPLAB 0003-6951 95, 143107 (2009). 10.1063/1.3243695
13. Z. Chen, Y. Lin, M. Rooks, and P. Avouris, Physica E (Amsterdam) PELNFM 1386-9477 40, 228 (2007). 10.1016/j.physe.2007.06.020 (Pubitemid 350102338)
14. M. Han, B. Ozylmaz, Y. Zhang, and P. Kim, Phys. Rev. Lett. PRLTAO 0031-9007 98, 206805 (2007). 10.1103/PhysRevLett.98.206805 (Pubitemid 47139572)
15. X. Li, X. Wang, L. Zhang, S. Lee, and H. Dai, Science SCIEAS 0036-8075 319, 1229 (2008). 10.1126/science.1150878 (Pubitemid 351323015)
16. K. Wakabayashi and M. Sigrist, Phys. Rev. Lett. PRLTAO 0031-9007 84, 3390 (2000). 10.1103/PhysRevLett.84.3390
17. K. Wakabayashi, Phys. Rev. B PLRBAQ 0556-2805 64, 125428 (2001). 10.1103/PhysRevB.64.125428
18. K. Tada and K. Watanabe, Phys. Rev. Lett. PRLTAO 0031-9007 88, 127601 (2002). 10.1103/PhysRevLett.88.127601
19. C. P. Chang, C. L. Lu, F. L. Shyu, R. B. Chen, Y. C. Huang, and M. F. Lin, Physica E (Amsterdam) PELNFM 1386-9477 82, 27 (2005).
20. Y. Shibayama, H. Sato, T. Enoki, and M. Endo, Phys. Rev. Lett. PRLTAO 0031-9007 84, 1744 (2000). 10.1103/PhysRevLett.84.1744
21. S. C. Chen, T. S. Wang, C. H. Lee, and M. F. Lin, Phys. Lett. A PYLAAG 0375-9601 372, 5999 (2008). 10.1016/j.physleta.2008.07.066
22. J. Y. Wu, J. H. Ho, Y. H. Lai, T. S. Li, and M. F. Lin, Phys. Lett. A PYLAAG 0375-9601 369, 333 (2007). 10.1016/j.physleta.2007.04.095
23. K. Harigaya, Chem. Phys. Lett. CHPLBC 0009-2614 340, 123 (2001). 10.1016/S0009-2614(01)00430-4 (Pubitemid 33396295)
24. K. Wakabayashi, M. Fujita, H. Ajiki, and M. Sigrist, Phys. Rev. B PLRBAQ 0556-2805 59, 8271 (1999). 10.1103/PhysRevB.59.8271
25. Y. C. Huang, C. P. Chang, and M. F. Lin, Nanotechnology NNOTER 0957-4484 18, 495401 (2007). 10.1088/0957-4484/18/49/495401 (Pubitemid 350145295)
26. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, and A. A. Firsov, Nature (London) NATUAS 0028-0836 438, 197 (2005). 10.1038/nature04233 (Pubitemid 41599867)
27. Y. Zhang, Y. Tan, H. L. Stormer, and P. Kim, Nature (London) NATUAS 0028-0836 438, 201 (2005). 10.1038/nature04235 (Pubitemid 41599868)
28. G. Li and E. Y. Andrei, Nat. Phys. ZZZZZZ 1745-2473 3, 623 (2007). 10.1038/nphys653
29. V. P. Gusynin and S. G. Sharapov, Phys. Rev. Lett. PRLTAO 0031-9007 95, 146801 (2005). 10.1103/PhysRevLett.95.146801 (Pubitemid 41777601)
30. S. Datta, Electronic Transport in Mesoscopic System (Cambridge University Press, Cambridge, 1995).
31. A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, Rev. Mod. Phys. RMPHAT 0034-6861 81, 109 (2009). 10.1103/RevModPhys.81.109
32. G. Li, A. Luican, and E. Y. Andrei, Phys. Rev. Lett. PRLTAO 0031-9007 102, 176804 (2009). 10.1103/PhysRevLett.102.176804
33. W. H. Wang, K. Pi, Y. Li, Y. F. Chiang, P. Wei, J. Shi, and R. K. Kawakami, Phys. Rev. B PLRBAQ 0556-2805 77, 020402 (R) (2008). 10.1103/PhysRevB.77.020402
34. E. W. Hill, A. K. Geim, K. Novoselov, F. Schedin, and P. Black, IEEE Trans. Magn. IEMGAQ 0018-9464 42, 2694 (2006). 10.1109/TMAG.2006.878852
35. K. H. Ding, Z. G. Zhu, and J. Berakdar, Phys. Rev. B PLRBAQ 0556-2805 79, 045405 (2009). 10.1103/PhysRevB.79.045405
36. L. Brey and H. A. Fertig, Phys. Rev. B PLRBAQ 0556-2805 76, 205435 (2007). 10.1103/PhysRevB.76.205435
37. A. Saffarzadeh and M. G. Asl, Eur. Phys. J. B EPJBFY 1434-6028 67, 239 (2009). 10.1140/epjb/e2009-00034-6
38. W. Y. Kim and K. S. Kim, Nat. Nanotechnol. NNAABX 1748-3387 3, 408 (2008). 10.1038/nnano.2008.163
39. R. Saito, G. Dresselhaus, and M. Dresselhaus, Physical Properties of Carbon Nanotubes (Imperial College Press, London, 1998). 10.1142/9781860943799
40. R. E. Peierls, Z. Phys. ZEPYAA 0044-3328 80, 763 (1933). 10.1007/BF01342591
41. S. Datta, Quantum Transport: Atom to Transistor (Cambridge University Press, Cambridge, 2005).
42. Y. Son, M. L. Cohen, and S. G. Louie, Phys. Rev. Lett. PRLTAO 0031-9007 97, 216803 (2006). 10.1103/PhysRevLett.97.216803 (Pubitemid 44808139)
43. X. Wang, Y. Ouyang, X. Li, H. Wang, J. Guo, and H. Dai, Phys. Rev. Lett. PRLTAO 0031-9007 100, 206803 (2008). 10.1103/PhysRevLett.100.206803 (Pubitemid 351718006)
44. M. Evaldsson, I. V. Zozoulenko, H. Xu, and T. Heinzel, Phys. Rev. B PLRBAQ 0556-2805 78, 161407 (R) (2008). 10.1103/PhysRevB.78.161407
45. The effect of edge-roughness induced conductance gap is significant only when the width of the AGNR is sufficiently large. For AGNR with smaller width, conductance gap will decrease with ER, M. Luisier and G. Klimeck, Appl. Phys. Lett. APPLAB 0003-6951 94, 223505 (2009) 10.1063/1.3140505; G. Liang, S. B. Khalid, and K. T. Lam, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 43, 215101 (2010). 10.1088/0022-3727/43/21/215101