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Volumn 95, Issue 14, 2009, Pages

Bilayer graphene nanoribbon nanoelectromechanical system device: A computational study

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; BISTABLE DEVICES; BISTABLE SWITCHES; COMPUTATIONAL STUDIES; DEVICE STRUCTURES; FLOATING GATES; FORCE SENSOR; GATE BIAS; GRAPHENE NANO-RIBBON; INTERLAYER DISTANCE; NANO ELECTROMECHANICAL SYSTEMS; NANOELECTROMECHANICAL DEVICES; OFF CURRENT; OPERATING MECHANISM; OUTPUT CHARACTERISTICS; RADIO FREQUENCY COMMUNICATION; SEMICONDUCTOR MEMORY; VIA FIRST;

EID: 70349922943     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3243695     Document Type: Article
Times cited : (59)

References (23)
  • 7
    • 33646738469 scopus 로고    scopus 로고
    • Concept of nonvolatile memory based on multiwall carbon nanotubes
    • DOI 10.1088/0957-4484/17/10/007, PII S0957448406168063
    • L. Maslov, Nanotechnology 0957-4484 17, 2475 (2006). 10.1088/0957-4484/ 17/10/007 (Pubitemid 43745781)
    • (2006) Nanotechnology , vol.17 , Issue.10 , pp. 2475-2482
    • Maslov, L.1
  • 11
    • 40049093097 scopus 로고    scopus 로고
    • Chemically derived, ultrasmooth graphene nanoribbon semiconductors
    • DOI 10.1126/science.1150878
    • X. Li, X. Wang, L. Zhang, S. Lee, and H. Dai, Science 0036-8075 319, 1229 (2008). 10.1126/science.1150878 (Pubitemid 351323015)
    • (2008) Science , vol.319 , Issue.5867 , pp. 1229-1232
    • Li, X.1    Wang, X.2    Zhang, L.3    Lee, S.4    Dai, H.5
  • 13
    • 33751348065 scopus 로고    scopus 로고
    • Energy gaps in graphene nanoribbons
    • DOI 10.1103/PhysRevLett.97.216803
    • Y. -W. Son, M. L. Cohen, and S. G. Louie, Phys. Rev. Lett. 0031-9007 97, 216803 (2006). 10.1103/PhysRevLett.97.216803 (Pubitemid 44808139)
    • (2006) Physical Review Letters , vol.97 , Issue.21 , pp. 216803
    • Son, Y.-W.1    Cohen, M.L.2    Louie, S.G.3
  • 19
    • 44849107305 scopus 로고    scopus 로고
    • 0003-6951,. 10.1063/1.2938058
    • K. -T. Lam and G. Liang, Appl. Phys. Lett. 0003-6951 92, 223106 (2008). 10.1063/1.2938058
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 223106
    • Lam, K.-T.1    Liang, G.2
  • 20
    • 0037091644 scopus 로고    scopus 로고
    • ATK Manual, "ATK version 2008.02," ATOMISTIX A/S.;, 0163-1829, () 10.1103/PhysRevB.65.165401;, J. Phys.: Condens. Matter 0953-8984 14, 2745 (2002) 10.1088/0953-8984/14/11/302;, Phys. Rev. B 0163-1829 63, 245407 (2001). The details of simulation parameters used are as follows: the local density approximation (LDA) exchange-correlation function with the double- basis set was implemented and the effect of core electrons was described with the default pseudopotential parameters. 10.1103/PhysRevB.63.245407
    • ATK Manual, "ATK version 2008.02," ATOMISTIX A/S www.atomistix.com.; M. Brandbyge, J. -L. Mozos, P. Ordejón, J. Taylor, and K. Stokbro, Phys. Rev. B 0163-1829 65, 165401 (2002) 10.1103/PhysRevB.65. 165401; J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, J. Phys.: Condens. Matter 0953-8984 14, 2745 (2002) 10.1088/0953-8984/14/11/302; J. Taylor, H. Guo, and J. Wang, Phys. Rev. B 0163-1829 63, 245407 (2001). The details of simulation parameters used are as follows: the local density approximation (LDA) exchange-correlation function with the double- basis set was implemented and the effect of core electrons was described with the default pseudopotential parameters. 10.1103/PhysRevB.63.245407
    • (2002) Phys. Rev. B , vol.65 , pp. 165401
    • Brandbyge, M.1    Mozos, J.-L.2    Ordejón, P.3    Taylor, J.4    Stokbro, K.5    Soler, J.M.6    Artacho, E.7    Gale, J.D.8    García, A.9    Junquera, J.10    Ordejón, P.11    Sánchez-Portal, D.12    Taylor, J.13    Guo, H.14    Wang, J.15
  • 21
    • 33947248679 scopus 로고    scopus 로고
    • 3-D design and analysis of functional NEMS-gate MOSFETs and SETs
    • DOI 10.1109/TNANO.2007.891825
    • B. Pruvost, H. Mizuta, and S. Oda, IEEE Trans. Nanotechnol. 1536-125X 6, 218 (2007). 10.1109/TNANO.2007.891825 (Pubitemid 46418310)
    • (2007) IEEE Transactions on Nanotechnology , vol.6 , Issue.2 , pp. 218-223
    • Pruvost, B.1    Mizuta, H.2    Oda, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.