Collected charge analysis for a new transient model by TCAD simulation in 90 nm technology

IEEE Transactions on Nuclear Science

Volumn 57, Issue 4 PART 1, 2010, Pages 1869-1875

  Artola, Laurent ^a,b   Hubert, G ^a   Duzellier, S ^a   Bezerra, Francoise ^b  

^a ONERA   (France)

^b CNES   (France)

Author keywords

Charge collection; diffusion analytical model; heavy ion; single event effect; TCAD simulation

Indexed keywords

90 NM TECHNOLOGY; 90NM CMOS; BULK TECHNOLOGIES; CHARGE ANALYSIS; CHARGE COLLECTION; SINGLE EVENT EFFECTS; TCAD SIMULATION; TRANSIENT MODEL;

DIFFUSION; HEAVY IONS; MATHEMATICAL MODELS; MODELS;

COMPUTER SIMULATION;

EID: 77955834771     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2053944     Document Type: Conference Paper

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