Criterion for SEU occurrence in SRAM deduced from circuit and device simulations in case of neutron-induced ser

IEEE Transactions on Nuclear Science

Volumn 52, Issue 4, 2005, Pages 1148-1155

  Merelle T ^a,b   Chabane, H ^b   Palau, J M ^b   Castellani Coulie K ^b,c   Wrobel, F ^b,d   Saigne F ^b   Sagnes, B ^b   Boch, J ^b   Vaille, J R ^b   Gasiot, G ^a   Roche, P ^a   Palau, M C ^e   Carriere T ^e  

^a STMICROELECTRONICS   (France)

^b UNIV MONTPELLIER   (France)

^c AIX MARSEILLE UNIVERSITÉ   (France)

^d UNIVERSITÉ CÔTE D'AZUR   (France)

^e AIRBUS GROUP INNOVATIONS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; IONS; NETWORKS (CIRCUITS); NEUTRONS;

DEVICE SIMULATION; PARASITIC PULSE; SER;

STATIC RANDOM ACCESS STORAGE;

EID: 27644435667     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.852319     Document Type: Article

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