Self-consistent calculation of tunneling current in w-GaN/AlGaN(0001) two-barrier heterostructures

Semiconductors

Volumn 40, Issue 6, 2006, Pages 675-680

  Grinyaev, S N ^a   Razzhuvalov, A N ^a  

^a TOMSK STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33744726500     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782606060121     Document Type: Article

References (12)

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