Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H-SiC and Si

Solid-State Electronics

Volumn 44, Issue 3, 2000, Pages 471-476

  Persson, C ^a   Lindefelt, U ^a,b   Sernelius, B E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARBON; EIGENVALUES AND EIGENFUNCTIONS; ENERGY GAP; HYDROGEN; PHONONS; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SILICON CARBIDE;

BANDGAP SHIFTS; ELECTRON HOLE PLASMA; RANDOM PHASE APPROXIMATION;

ELECTRONIC STRUCTURE;

EID: 0034159403     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00180-X     Document Type: Article

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