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Volumn 81, Issue 20, 2010, Pages

Atomic structures and energetics of 90°dislocation cores in Ge films on Si(001)

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EID: 77955721683     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.205309     Document Type: Article
Times cited : (27)

References (28)
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    • Energetics of a pair of five- and seven-membered rings has been discussed using the empirical force model or the tight binding model:
    • Energetics of a pair of five- and seven-membered rings has been discussed using the empirical force model or the tight binding model: M. Dornheim and H. Teichler, Phys. Status Solidi A 171, 267 (1991)
    • (1991) Phys. Status Solidi A , vol.171 , pp. 267
    • Dornheim, M.1    Teichler, H.2
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  • 20
    • 77955728804 scopus 로고    scopus 로고
    • In our model, the dislocation core is aligned only along [110] direction. Therefore the strain-relaxed Ge layers in our model are uniaxially compressed along [1 1̄ 0 ] direction.
    • In our model, the dislocation core is aligned only along [110] direction. Therefore the strain-relaxed Ge layers in our model are uniaxially compressed along [1 1 ̄ 0] direction.
  • 21
    • 0007661681 scopus 로고    scopus 로고
    • Segregation of large impurities in five- and seven-membered rings in Si is discussed in terms of local strains:, 10.1103/PhysRevB.61.1674
    • Segregation of large impurities in five- and seven-membered rings in Si is discussed in terms of local strains: T. Kaplan, F. Liu, M. Mostoller, M. F. Chisholm, and V. Milman, Phys. Rev. B 61, 1674 (2000). 10.1103/PhysRevB.61.1674
    • (2000) Phys. Rev. B , vol.61 , pp. 1674
    • Kaplan, T.1    Liu, F.2    Mostoller, M.3    Chisholm, M.F.4    Milman, V.5
  • 22
    • 77955730919 scopus 로고    scopus 로고
    • The energy difference can be written as Δγ= γ Ge rl - γ Ge st, where γ Ge rl = μ Ge ′ /A and γ Ge st = μGe /A. The chemical potentials μGe and μ Ge ′ are the energies per atom in biaxially compressed and strain-relaxed Ge bulks, respectively, and A is the area in 2 of the lateral unit cell of the biaxially compressed ideal (001) face.
    • The energy difference can be written as Δ γ = γ Ge rl - γ Ge st, where γ Ge rl = μ Ge ′ / A and γ Ge st = μ Ge / A. The chemical potentials μ Ge and μ Ge ′ are the energies per atom in biaxially compressed and strain-relaxed Ge bulks, respectively, and A is the area in 2 of the lateral unit cell of the biaxially compressed ideal (001) face.
  • 25
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    • This feature is also observed in pairs of the edge dislocations in Si (Ref.).
    • This feature is also observed in pairs of the edge dislocations in Si (Ref.).
  • 26
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    • Tersoff, J.1    Hamann, D.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.