Study of the misfit dislocations in semiconductor heterostructures by density functional TB molecular dynamics and path probability methods

Microelectronics Journal

Volumn 34, Issue 5-8, 2003, Pages 615-617

  Masuda Jindo, K ^a   Kikuchi, R ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Misfit dislocation; Path probability method; Semiconductor heterostructures

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; THERMODYNAMIC PROPERTIES;

PATH PROBABILITY METHODS;

HETEROJUNCTIONS;

EID: 0037567277     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00062-4     Document Type: Conference Paper

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