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Journal of Crystal Growth

Volumn 237-239, Issue 1-4 I, 2002, Pages 1-7

First-principle calculations for mechanisms of semiconductor epitaxial growth

(1) Oshiyama, Atsushi a

a UNIVERSITY OF TSUKUBA (Japan)

Author keywords

A1. Adsorption; A1. Diffusion; A1. Growth Models; A3. Molecular beam epitaxy; B2. Semiconducting silicon

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; CRYSTAL STRUCTURE; DIFFUSION; FILM GROWTH; HYDROGENATION; MICROSCOPIC EXAMINATION; MORPHOLOGY; QUANTUM THEORY; SEMICONDUCTING SILICON;

ATOMIC REACTIONS; DENSITY FUNCTIONAL THEORY (DFT);

MOLECULAR BEAM EPITAXY;

EID: 0036531091 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01840-1 Document Type: Conference Paper

Times cited : (5)

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