Performance improvement of phase-change memory cell with cup-shaped bottom electrode contact

Applied Physics Letters

Volumn 93, Issue 10, 2008, Pages

  Wu, L C ^a   Song, Z T ^a   Rao, F ^a   Gong, Y F ^a   Liu, B ^a   Wang, L Y ^a   Liu, W L ^a   Feng, S L ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CELLS; CYTOLOGY; ELECTROLYSIS; HEATING; PULSE CODE MODULATION; TUNGSTEN;

BOTTOM ELECTRODE CONTACT; HIGH HEATING EFFICIENCY; RESET VOLTAGE;

PHASE CHANGE MEMORY;

EID: 51749091504     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2980029     Document Type: Article

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