Growth of ZnO/sapphire heteroepitaxial thin films by radio-frequency sputtering with a raw powder target

Thin Solid Films

Volumn 518, Issue 18, 2010, Pages 5164-5168

  Seo, S H ^a   Kang, H C ^b  

^a Korea Electrotechnology Research Institute (KERI)   (South Korea)

^b Chosun University   (South Korea)

Author keywords

Heteroepitaxy; Optical properties; Powder target; Radio frequency sputtering; Thin films; X ray diffraction; Zinc oxide

Indexed keywords

3-DIMENSIONAL; BAND GAP ENERGY; BAND-EDGE EMISSIONS; DOPED ZNO; GROWTH MODES; HETEROEPITAXIAL THIN FILMS; HETEROEPITAXY; NEAR INFRARED; NEAR-IR; OPTICAL TRANSMITTANCE; PLANAR LAYERS; POWDER TARGET; RADIO-FREQUENCY SPUTTERING; RAW POWDERS; SOURCE MATERIAL; TRANSMISSION SPECTROSCOPY; ZNO; ZNO FILMS; ZNO POWDER; ZNO THIN FILM;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL GROWTH; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; OXIDE FILMS; PHOTOLUMINESCENCE SPECTROSCOPY; SAPPHIRE; SINTERING; SPUTTERING; SUBSTRATES; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAYS; ZINC;

ZINC OXIDE;

EID: 77955654723     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.03.032     Document Type: Article

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