2D device simulation of AlGaN/GaN HFET current collapse caused by surface negative charge injection

IEICE Transactions on Electronics

Volumn E93-C, Issue 8, 2010, Pages 1218-1224

  Ikawa, Yusuke ^a   Yuasa, Yorihide ^a   Hu, Cheng Yu ^a   Ao, Jin Ping ^a   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

AlGaN GaN HFET; Collapse; Pinning; Simulation; Surface states; Virtual gate

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POTENTIAL; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; SEMICONDUCTOR ALLOYS; SURFACE STATES;

ALGAN/GAN HFETS; COLLAPSE; PINNING; SIMULATION; VIRTUAL GATE;

GALLIUM ALLOYS;

EID: 77955625214     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1587/transele.E93.C.1218     Document Type: Conference Paper

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