Scanning electron microscope observation of dislocations in semiconductor and metal materials

Journal of Electron Microscopy

Volumn 59, Issue SUPPL. 1, 2010, Pages

  Kuwano, Noriyuki ^a,b   Itakura, Masaru ^b   Nagatomo, Yoshiyuki ^c   Tachibana, Shigeaki ^d  

^a Art Science and Technology Center for Cooperative Research   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c MITSUBISHI MATERIALS CORPORATION   (Japan)

^d Yokohama Demonstration Laboratory   (Japan)

Author keywords

channelling contrast; diffraction; dislocations; metal materials; scanning electron microscopy; semiconductor materials

Indexed keywords

DIFFRACTION; ELECTRONS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

BACKSCATTERED ELECTRON IMAGES; CHANNELING CONTRAST; DISLOCATION; ELECTRON MICROSCOPE IMAGES; HIGH CONTRAST; IMAGE CONTRASTS; METALS MATERIALS; SCANNING ELECTRONS; SCANNING TRANSMISSION ELECTRON MICROSCOPES; SINGLE DISLOCATION;

SEMICONDUCTOR MATERIALS;

EID: 77955542796     PISSN: 00220744     EISSN: 14779986     Source Type: Journal    
DOI: 10.1093/jmicro/dfq045     Document Type: Conference Paper

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