Variations in contrast of scanning electron microscope images for microstructure analysis of Si-based semiconductor materials

Journal of Electron Microscopy

Volumn 59, Issue SUPPL. 1, 2010, Pages

  Itakura, Masaru ^a   Kuwano, Noriyuki ^a   Sato, Kaoru ^b   Tachibana, Shigeaki ^c  

^a KYUSHU UNIVERSITY   (Japan)

^b JFE STEEL CORPORATION   (Japan)

^c Yokohama Demonstration Laboratory   (Japan)

Author keywords

channelling contrast; scanning electron microscopy; semiconductor materials

Indexed keywords

SIGE;

CRYSTALLINE MATERIALS; ELECTRONS; SEMICONDUCTOR MATERIALS; SI-GE ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS MATRICES; BACKSCATTERED ELECTRONS; CHANNELING CONTRAST; ELECTRON MICROSCOPE IMAGES; IMAGE CONTRASTS; MICROSTRUCTURES ANALYSIS; SCANNING ELECTRONS; SECONDARY ELECTRONS; SEMICONDUCTING MATERIALS; SI-BASED;

SCANNING ELECTRON MICROSCOPY;

EID: 77955548361     PISSN: 00220744     EISSN: 14779986     Source Type: Journal    
DOI: 10.1093/jmicro/dfq044     Document Type: Conference Paper

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