Antimony alloys for phase-change memory with high thermal stability

Scripta Materialia

Volumn 63, Issue 8, 2010, Pages 855-858

  Kao, Kin Fu ^a   Chang, Chih Chung ^a   Chen, Frederick T ^b   Tsai, Ming Jinn ^b   Chin, Tsung Shune ^a,c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Antimonide; Ga Te Sb alloys; Phase change memory; Thermal stability

Indexed keywords

ACTIVATION ENERGY OF CRYSTALLIZATION; ANTIMONIDE; ANTIMONIDES; CRYSTALLIZATION TEMPERATURE; DATA RETENTION; HIGH THERMAL STABILITY; IN-PHASE; MEMORY SWITCHING; PULSE WIDTH; TEST CELL; THERMAL STABILITY;

ACTIVATION ENERGY; ANTIMONY; CRYSTALLIZATION; GALLIUM; GALLIUM ALLOYS; GERMANIUM; TELLURIUM COMPOUNDS; THERMODYNAMIC STABILITY;

PHASE CHANGE MEMORY;

EID: 77955514159     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2010.06.036     Document Type: Article

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