Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory

Semiconductor Science and Technology

Volumn 23, Issue 5, 2008, Pages

  Zhang, Ting ^a,b   Song, Zhitang ^a   Liu, Bo ^a   Feng, Songlin ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CRYSTALLIZATION; PHASE CHANGE MEMORY; SILICON; TELLURIUM;

BINARY MATERIALS; CRYSTALLIZATION TEMPERATURE; DATA RETENTION; METAL-OXIDE-SEMICONDUCTOR MANUFACTURING PROCESS;

BINARY ALLOYS;

EID: 43149098503     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/5/055010     Document Type: Article

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