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Current Applied Physics

Volumn 10, Issue SUPPL. 3, 2010, Pages

Deposition rate of SiN film grown by using a pulsed-PECVD at room-temperature

(2) Kim, Suyeon a Kim, Byungwhan a

a Sejong University (South Korea)

Author keywords

Deposition rate; Ion energy distribution; Neural network; Pulsed PECVD; Room temperature; SiN film

Indexed keywords

BIAS POWER; CHEMICAL VAPOR; DIAGNOSTIC PARAMETER; DUTY RATIOS; EXPERIMENTAL DATA; HIGH POWER; HIGHLY-CORRELATED; ION ENERGIES; ION ENERGY DISTRIBUTION; ION ENERGY DISTRIBUTIONS; NEURAL NETWORK MODEL; POWER RANGE; PULSED-PLASMA; ROOM TEMPERATURE; SIN FILMS;

DEPOSITION; DEPOSITION RATES; ELECTRIC POWER DISTRIBUTION; ION BEAMS; IONS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA SOURCES; REFRACTIVE INDEX; SILICON NITRIDE;

NEURAL NETWORKS;

EID: 77955511510 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2010.02.033 Document Type: Conference Paper

Times cited : (11)

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