Room-temperature high radio-frequency source power effects on silicon nitride films deposited by using a plasma-enhanced chemical vapor deposition

Metals and Materials International

Volumn 14, Issue 5, 2008, Pages 637-641

  Kim, Byungwhan ^a   Kim, Suyeon ^a  

^a Sejong University   (South Korea)

Author keywords

Deposition rate; Ion energy analyzer; Ion energy distribution; Refractive index; Silicon nitride film; Surface roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION RATES; IONS; NITRIDES; PIXELS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RADIO WAVES; REFRACTIVE INDEX; SILICON NITRIDE;

FILM CHARACTERISTICS; ION ENERGY ANALYZER; ION ENERGY DISTRIBUTIONS; MEAN SURFACE ROUGHNESS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEMS; RADIO FREQUENCY SOURCE; RADIO FREQUENCY SOURCE POWER; SILICON NITRIDE FILM;

SURFACE ROUGHNESS;

EID: 55449099008     PISSN: 15989623     EISSN: None     Source Type: Journal    
DOI: 10.3365/met.mat.2008.10.637     Document Type: Article

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