Surface morphology of SiN film deposited by a pulsed-plasma enhanced chemical vapor deposition at room temperature

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 10, 2008, Pages 5363-5366

  Kim, Byungwhan ^a   Kim, Suyean ^a   Seo, Yong Ho ^a   Kim, Dong Hwan ^b   Kim, Sun Jae ^a   Jung, Sang Chul ^c  

^a Sejong University   (South Korea)

^b Seoul National University of Science and Technology   (South Korea)

^c Sunchon National University   (South Korea)

Author keywords

Pulsed Plasma Enhanced Chemical Vapor Deposition; Scanning Electron Microscope; SiH 4 NH 3 Plasma; Silicon Nitride Film; Surface Morphology; Surface Roughness

Indexed keywords

ATOMIC FORCES; DUTY CYCLES; NON UNIFORMITIES; PIXEL SIZES; PULSED PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PULSED PLASMAS; RADIO FREQUENCY SOURCE POWERS; ROOM TEMPERATURES; ROUGHNESS VARIATIONS; SCANNING ELECTRON MICROSCOPES; SIH 4-NH 3 PLASMA; SILICON NITRIDE (SIN; SIN FILMS; SURFACE DENSIFICATION;

ELECTRON MICROSCOPES; FRICTION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; METAL ANALYSIS; MICROSCOPES; MORPHOLOGY; NITRIDES; PIXELS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SCANNING; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; SURFACE PROPERTIES; SURFACE ROUGHNESS; VAPOR DEPOSITION; VAPORS;

SURFACE MORPHOLOGY;

EID: 58149260948     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.1342     Document Type: Conference Paper

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