Low-temperature MBE-grown GaBiAs layers for terahertz optoelectronic applications

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 12, 2009, Pages 2649-2651

  Pačebutas, Vaidas ^a   Bertulis, Klemensas ^a   Bičiunas, Andrius ^a   Krotkus, Arunas ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DYNAMICS; CARRIER RECOMBINATION; DECAY COMPONENTS; ELECTRON LIFETIME; ELECTRON TRAPPING; LOW SUBSTRATE TEMPERATURE; LOW TEMPERATURES; OPTICAL EXCITATIONS; OPTICAL PUMP-TERAHERTZ PROBE; PICOSECONDS; SIGNAL BANDWIDTH; TERAHERTZ EMITTERS; TERAHERTZ OPTOELECTRONICS; TIME DOMAIN SPECTROSCOPY; TRAP DENSITY;

BUILDING MATERIALS; CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; INSULATING MATERIALS; OPTICAL PUMPING; PHOTOEXCITATION;

TERAHERTZ SPECTROSCOPY;

EID: 77955437430     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982538     Document Type: Conference Paper

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