Optoelectronic terahertz radiation system based on femtosecond 1m laser pulses and GaBiAs detector

Electronics Letters

Volumn 44, Issue 19, 2008, Pages 1154-1155

  Pacebutas V ^a   Biciunas A ^a   Bertulis, K ^a   Krotkus, A ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER NETWORKS; ELECTRIC CONDUCTIVITY; EPITAXIAL LAYERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; YTTERBIUM;

FEMTO SECONDS; NARROW-GAP SEMICONDUCTORS; PHOTOCONDUCTIVE DETECTORS; TERAHERTZ TIME-DOMAIN SPECTROSCOPY;

PULSED LASER APPLICATIONS;

EID: 51549096578     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20081630     Document Type: Article

References (9)

1. Schneider, A., and Günter, P.: ' Coherent detection of terahertz pulses based on two-photon absorption in a photodiode ', Appl. Phys. Lett., 2007, 90, p. 121125 10.1063/1.2716070 0003-6951
2. Suzuki, M., and Tonouchi, M.: ' Fe-implanted InGaAs photoconductive terahertz detectors triggered by 1.56m femtosecond optical pulses ', Appl. Phys. Lett., 2005, 86, p. 163504 10.1063/1.1901817 0003-6951
3. Ferguson, B., and Zhang, X.-C.: ' Materials for terahertz science and technology ', Nature Mater., 2002, 1, p. 26-33 10.1038/nmat708 1476-1122
4. Major, A., Barzda, V., Piunno, P., Musikhin, S., and Krull, U.J.: ' An extended cavity diode-pumped femtosecond Yb:KGW laser for applications in optical DNA sensor technology based on fluorescence lifetime measurements ', Opt. Express, 2006, 14, (12), p. 5285-5294 1094-4087
5. 2 laser ', Opt. Lett., 2001, 26, (21), p. 1723-1725 0146-9592
6. Bertulis, K., Krotkus, A., Aleksejenko, G., Pačebutas, V., Adomavičius, R., Molis, G., and Marcinkevičius, S.: ' GaBiAs: A material for optoelectronic terahertz devices ', Appl. Phys. Lett., 2006, 88, p. 201112 10.1063/1.2205180 0003-6951
7. Molis, G., Adomavičius, R., Krotkus, A., Bertulis, K., Giniūnas, L., Pocius, J., and Danielius, R.: ' Terahertz time-domain spectroscopy system based on femtosecond Yb:KGW laser ', Electron. Lett., 2007, 43, (3), p. 190-191 10.1049/el:20073168 0013-5194
8. Pačebutas, V., Bertulis, K., Dapkus, L., Aleksejenko, G., Krotkus, A., Yu, K.M., and Waliukiewicz, W.: ' Characterization of low-temperature molecular-beam-epitaxy grown GaBiAs layers ', Semicond. Sci. Technol., 2007, 22, p. 819-823 0268-1242
9. Adomavičius, R., Urbanowicz, A., Molis, G., Krotkus, A., and Satkovskis, E.: ' Terahertz emission from p-lnAs due to the instantaneous polarization ', Appl. Phys. Lett., 2004, 85, p. 2463-2465 10.1063/1.1795980 0003-6951