Low-pressure fast growth and characterization of 4H-SiC epilayers

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 77-82

  Tsuchida, H ^a   Ito, M ^a   Kamata, I ^a   Nagano, M ^a   Miyazawa, T ^a   Hoshino, N ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

Basal plane dislocation; Carrier lifetime; Defect; Epitaxial growth; Stacking fault

Indexed keywords

CARRIER LIFETIME; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; EPILAYERS; EPITAXIAL GROWTH; GROWTH RATE; SEMICONDUCTOR QUANTUM WELLS; STACKING FAULTS; TEMPERATURE; TOPOGRAPHY;

BASAL PLANE DISLOCATIONS; EPILAYERS GROWN; FAST GROWTH RATE; LOW TEMPERATURE PHOTOLUMINESCENCE; MATERIAL QUALITY; PHOTOCONDUCTIVE DECAY; SYNCHROTRON TOPOGRAPHY; SYSTEM PRESSURE;

SILICON CARBIDE;

EID: 77955437121     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.77     Document Type: Conference Paper

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