Development of a practical high-rate CVD system

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 119-122

  Ishida, Y ^a   Takahashi, T ^a   Okumura, H ^a   Arai, K ^a   Yoshida, S ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

4H SiC; Cvd; high rate growth; Homoepitaxial growth

Indexed keywords

CARRIER CONCENTRATION; EPITAXIAL GROWTH; SILICON CARBIDE; SILICON WAFERS;

4H-SIC; AVERAGE GROWTH RATE; CHEMICAL VAPOUR DEPOSITION; CVD; HIGH GROWTH-RATE; HIGH RATE; HIGH-RATE GROWTH; HOMOEPITAXIAL GROWTH; PROCESS GAS; VAPOR DEPOSITION SYSTEMS;

CHEMICAL VAPOR DEPOSITION;

EID: 63849141221     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.119     Document Type: Conference Paper

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