Long time stability of ITO/NiPc/ZnO/Al devices with ZnO buffer layer formed by atomic layer deposition technique-impedance spectroscopy analysis

Materials Science and Engineering: B

Volumn 172, Issue 3, 2010, Pages 272-275

  Stakhira, Pavlo Y ^a   Grygorchak, Ivan I ^a   Cherpak, Vladyslav V ^a   Ivastchyshyn, Fedir O ^a   Volynyuk, Dmytro Y ^a   Luka, Grzegorz ^b   Godlewski, Marek ^b,c   Guziewicz, Elzbieta ^b   Pakhomov, Georgi L ^d   Hotra, Zenon Y ^a,e  

^a LVIV POLYTECHNIC NATIONAL UNIVERSITY   (Ukraine)

^b INSTITUTE OF PHYSICS   (Poland)

^c CARDINAL STEFAN WYSZY SKI UNIVERSITY   (Poland)

^d INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^e RZESZOW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Atomic layer deposition; Impedance spectroscopy; Nickel phthalocyanine; Zinc oxide

Indexed keywords

ALUMINUM COMPOUNDS; ATMOSPHERIC STRUCTURE; ATOMS; II-VI SEMICONDUCTORS; NICKEL COMPOUNDS; SPECTROSCOPY; TEMPERATURE; ZINC OXIDE;

ATOMIC-LAYER DEPOSITION; DEPOSITION TECHNIQUE; IMPEDANCE SPECTROSCOPY; LONG-TIME STABILITIES; LOWS-TEMPERATURES; METALPHTHALOCYANINES; NICKEL PHTHALOCYANINES; ORGANIC PHOTOVOLTAIC DEVICES; OXIDE BUFFER LAYERS; ULTRA-THIN;

ATOMIC LAYER DEPOSITION;

EID: 77955429975     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2010.05.029     Document Type: Article

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