Superconformal filling of 41 nm trenches with Cu electroless deposition on Au-activated self-assembled monolayer

Materials Chemistry and Physics

Volumn 123, Issue 2-3, 2010, Pages 401-406

  Han, W K ^a   Hwang, G H ^a   Hong, S J ^a   An, H H ^a   Yoon, C S ^a   Kim, J H ^b   Lee, M J ^b   Hong, G ^b   Park, K S ^b   Kang, S G ^a  

^a Hanyang University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Cu gap filling; Electroless deposition; Narrow trench pattern; Self assembled monolayer

Indexed keywords

ANNEALING PROCESS; AU CATALYSTS; AU NANOPARTICLE; CATALYTIC LAYERS; COATED SUBSTRATES; CU ELECTROLESS DEPOSITION; CU FILMS; ELECTRICAL RESISTIVITY; ELECTROLESS BATH; ELECTROLESS DEPOSITION; ELECTROSTATIC INTERACTIONS; GAP FILLING; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; NANO-SIZED; POSITIVELY CHARGED; SAM LAYER; SI SUBSTRATES; TRENCH PATTERNS; UNIFORM DISTRIBUTION;

CATALYSTS; COPPER; COUPLING AGENTS; ELECTRIC CONDUCTIVITY; FILLING; GOLD COATINGS; NANOPARTICLES; ORGANIC COMPOUNDS; POLYETHYLENE GLYCOLS; POLYETHYLENE OXIDES; SELF ASSEMBLED MONOLAYERS; SUBSTRATES;

GOLD;

EID: 77955341867     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2010.04.029     Document Type: Article

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