Electromigration resistance of copper interconnects

Microelectronic Engineering

Volumn 33, Issue 1-4, 1997, Pages 75-84

  Save, D ^a   Braud, F ^a,b   Torres, J ^b   Binder, F ^c   Muller C ^c   Weidner, J O ^d   Hasse, W ^d  

^a Matra MHS TEMIC   (France)

^b CEA GRENOBLE   (France)

^c SIEMENS AG   (Germany)

^d Institute of Human Resource Management Leibniz University Hannover   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; COPPER; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTROMIGRATION; METALLIZING; THERMAL EFFECTS; ULSI CIRCUITS;

PHYSICAL VAPOR DEPOSITION (PVD);

MICROELECTRONIC PROCESSING;

EID: 0005932422     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0167-9317(96)00033-0     Document Type: Article

References (1)

1. F. Braud, G. Tartavel, G. Reimbold, A. Persico, J. Torres and J. Palleau, Electromigration of interconnects of TiN/Cu/TiN/Ti structure, ESREF, October 3-6 1995, Bordeaux, France.