Poly(3-hexylthiophene)/fullerene organic thin-film transistors: Investigation of photoresponse and memory effects

Japanese Journal of Applied Physics

Volumn 49, Issue 6 PART 2, 2010, Pages

  Mohamad, Khairul Anuar ^a,b   Goto, Keisuke ^a   Uesugi, Katsuhiro ^a   Fukuda, Hisashi ^a  

^a MURORAN INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITI MALAYSIA SABAH   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BUTYRIC ACIDS; CHANNEL CHARACTERISTICS; DARK CONDITIONS; DELAY TIME; DETRAPPING MECHANISM; ELECTRON TRAPPING; GATE VOLTAGES; LIGHT ILLUMINATION; MEMORY EFFECTS; MEMORY FUNCTIONS; METHYL ESTERS; OPTICAL RESPONSE; ORGANIC THIN FILM TRANSISTORS; PHOTOINDUCED CHARGE CARRIERS; PHOTORESPONSES; POLY-3-HEXYLTHIOPHENE; PROGRAM AND ERASE; RESPONSE TIME; SLOW RELAXATIONS; SOURCE-DRAIN CONTACTS; TRANSFER CURVES;

CARRIER MOBILITY; DRAIN CURRENT; ELECTRON TRAPS; ESTERS; FATTY ACIDS;

THIN FILM TRANSISTORS;

EID: 77955339334     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.06GG09     Document Type: Article

References (30)

1. S. R. Forrest: Nature 428 (2004) 911.
2. D. Wohrle and D. Meissner: Adv. Mater. 3 (1991) 129.
3. H. Sirringhaus, N. Tessler, and R. H. Friend: Science 280 (1998) 1741.
4. Y. Y. Noh, D. Y. Kim, and K. Yase: J. Appl. Phys. 98 (2005) 074505.
5. D. Tondelier, K. Lmimouni, and D. Vuillaume: Appl. Phys. Lett. 85 (2004) 5763.
6. A. Kanwal and M. Chhowalla: Appl. Phys. Lett. 89 (2006) 203103.
7. K. Kaneto, K. Mori, T. Morita, and W. Takashima: Jpn. J. Appl. Phys. 47 (2008) 1382.
8. C. Novembre, D. Guerin, K. Lmimouni, C. Gamrat, and D. Vuillaume: Appl. Phys. Lett. 92 (2008) 103314.
9. J. C. Scott: Science 304 (2004) 62.
10. J. H. Burroughes, D. D. C. Bradley, A. R. Brown, R. N. Marks, K. Mackay, R. H. Friend, P. L. Burns, and A. B. Holmes: Nature 347 (1990) 539.
11. R. H. Friend, R. W. Gymer, A. B. Holmes, J. H. Burroughes, R. N. Marks, C. Taliani, D. D. C. Bradley, D. A. Dos Santos, J. L. Bredas, M. Logdlund, and W. R. Salaneck: Nature 397 (1999) 121.
12. C. J. Brabec, N. S. Sariciftci, and J. C. Hummelen: Adv. Funct. Mater. 11 (2001) 15.
13. D. Gebeyehu, C. J. Brabec, F. Padinger, T. Fromherz, J. C. Hummelen, D. Badt, H. Schindler, and N. S. Sariciftci: Synth. Met. 118 (2001) 1.
14. G. D. Sharma, R. Kumar, S. K. Sharma, and M. S. Roy: Sol. Energy Mater. Sol. Cells 90 (2006) 933.
15. S. Dutta and K. S. Narayan: Adv. Mater. 16 (2004) 2151.
16. J. Ficker, H. von Seggern, H. Rost, W. Fix, W. Clemens, and I. McCulloch: Appl. Phys. Lett. 85 (2004) 1377.
17. N. Marjanovic, T. B. Singh, G. Dennler, S. Gunes, H. Neugebauer, N. S. Sariciftci, R. Schwodiauer, and S. Bauer: Org. Electron. 7 (2006) 188.
18. Y. R. Liu, J. B. Peng, and P. T. Lai: Thin Solid Films 516 (2008) 4295.
19. C. C. Chen, M. Y. Chiu, J. T. Sheu, and K. H. Wei: Appl. Phys. Lett. 92 (2008) 143105.
20. M. Y. Chiu, C. C. Chen, J. T. Sheu, and K. H. Wei: Org. Electron. 10 (2009) 769.
21. E. J. Meijer, D. M. De Leeuw, S. Setayesh, E. Van Veenendaal, B. H. Huisman, P. W. M. Blom, J. C. Hummelen, U. Scherf, and T. M. Klapwijk: Nat. Mater. 2 (2003) 678.
22. S. Cho, J. Yuen, J. Y. Kim, K. Lee, and A. J. Heeger: Appl. Phys. Lett. 89 (2006) 153505.
23. Y. Kim, S. A. Choulis, J. Nelson, and D. D. C. Bradley: Appl. Phys. Lett. 86 (2005) 063502.
24. K. Yoshino and M. Onoda: Kobunshi Erekutoronikusu-Dodensei Kobunshi to Sono Denshi Kokino Soshika (Polymer Electronics- Conducting Polymer and Its Electronically and Functional Devices) (Corona, Tokyo, 1996) p. 230 [in Japanese].
25. S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1981) 2nd ed., p. 440.
26. G. Wang, J. Swensen, D. Moses, and A. J. Heeger: J. Appl. Phys. 93 (2003) 6137.
27. S. Dutta and K. S. Narayan: Synth. Met. 146 (2004) 321.
28. G. Horowitz and P. Delannoy: J. Appl. Phys. 70 (1991) 469.
29. M. C. Hamilton, S. Martin, and J. Kanichi: IEEE Trans. Electron Devices 51 (2004) 877.
30. S. Dutta and K. S. Narayan: Phys. Rev. B 68 (2003) 125208.