Memory effects in poly(3-hexylthiophene) field-effect transistors with floating gate

Japanese Journal of Applied Physics

Volumn 47, Issue 2 PART 2, 2008, Pages 1382-1384

  Kaneto, Keiichi ^a   Mort, Keiko ^a   Morita, Takeomi ^a   Takashima, Wataru ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Field effects; Floating gate; Light induced memory; Organic memory; Poly(3 hexylthiophene)

Indexed keywords

CALCIUM; CARRIER MOBILITY; CARRIER TRANSPORT; DATA STORAGE EQUIPMENT; DRAIN CURRENT; ELECTROMAGNETIC WAVES; FIELD EFFECT TRANSISTORS; POLYIMIDES; POLYMERS; SEMICONDUCTING ORGANIC COMPOUNDS; TRANSISTORS;

DECAY TIMES; FIELD EFFECTS; FLOATING GATE; FLOATING GATES; GATE BIASES; GATE VOLTAGES; INSULATOR FILMS; LIGHT ILLUMINATIONS; MEMORY EFFECTS; ORGANIC MEMORY; ORGANIC MEMORY DEVICES; POLY(3-HEXYLTHIOPHENE); RETENTION TIMES; VOLTAGE CHARACTERISTICS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 54249097843     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1382     Document Type: Article

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