Infrared radiative properties of heavily doped silicon at room temperature

Journal of Heat Transfer

Volumn 132, Issue 2, 2010, Pages 1-8

  Basu, S ^a   Lee, B J ^a,b   Zhang, Z M ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b University of Pittsburgh   (United States)

Author keywords

Doped silicon; Microscale; Radiative properties; Thin films

Indexed keywords

DIELECTRIC FUNCTIONS; DOPED SILICON; DOPING CONCENTRATION; DRUDE MODELS; EXPERIMENTAL INVESTIGATIONS; FUTURE DESIGNS; HEAVILY DOPED; IMPLANTED DOPANTS; IONIZATION MODEL; MICRO-SCALES; MID-INFRARED REGIONS; MODEL PREDICTION; MULTI-LAYER THIN FILM; PEAK DOPING; PHOSPHORUS ATOM; RADIATIVE PROPERTIES; ROOM TEMPERATURE; SELECTIVE EMITTERS; SI SUBSTRATES; SI WAFER; SPECTRAL TRANSMITTANCE; WAVELENGTH RANGES;

BORON; CARRIER MOBILITY; FILM PREPARATION; MULTILAYER FILMS; MULTILAYERS; PHOSPHORUS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; REFLECTION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; VAPOR DEPOSITION; WAVELET TRANSFORMS;

DOPING (ADDITIVES);

EID: 77955292009     PISSN: 00221481     EISSN: 15288943     Source Type: Journal    
DOI: 10.1115/1.4000171     Document Type: Article

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