Nanoscale radiation heat transfer for silicon at different doping levels

International Journal of Heat and Mass Transfer

Volumn 49, Issue 9-10, 2006, Pages 1703-1718

  Fu, C J ^a,b   Zhang, Z M ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b PEKING UNIVERSITY   (China)

Author keywords

Doped silicon; Fluctuational electrodynamics; Microscale and nanoscale; Near field thermal radiation

Indexed keywords

CONCENTRATION (PROCESS); COOLING; ELECTRODYNAMICS; HEAT FLUX; HEATING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DOPED SILICON; FLUCTUATIONAL ELECTRODYNAMICS; MICROSCALE AND NANOSCALE; NEAR-FIELD THERMAL RADIATION;

HEAT RADIATION;

CONCENTRATION (PROCESS); COOLING; ELECTRODYNAMICS; HEAT FLUX; HEAT RADIATION; HEATING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

EID: 33645892567     PISSN: 00179310     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijheatmasstransfer.2005.09.037     Document Type: Article

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