Engineering infrared emission properties of silicon in the near field and the far field

Optics Communications

Volumn 237, Issue 4-6, 2004, Pages 379-388

  Marquier, F ^a   Joulain, K ^a   Mulet, J P ^a   Carminati, R ^a   Greffet, J J ^a  

^a LABORATOIRE EM2C   (France)

Author keywords

Emissivity; Infrared; Near field; Surface; Surface plasmon

Indexed keywords

COHERENT LIGHT; DENSITY (OPTICAL); DOPING (ADDITIVES); ELECTROMAGNETIC WAVES; ELECTRONIC DENSITY OF STATES; ENERGY TRANSFER; FREQUENCIES; INFRARED RADIATION; SILICON; SURFACE PLASMON RESONANCE; SURFACES; TUNING;

EMISSIVITY; NANOMETRIC DISTANCES; NEAR FIELD; SURFACE PLASMON;

OPTICAL COMMUNICATION;

EID: 2942691896     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optcom.2004.04.024     Document Type: Article

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