All-optical single-electron read-out devices based on GaN quantum dots

Applied Physics Letters

Volumn 81, Issue 27, 2002, Pages 5213-5215

  D'Amico, Irene ^a   Fossi, Fausto ^a,b  

^a ISI FOUNDATION   (Italy)

^b POLITECNICO DI TORINO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; GALLIUM NITRIDE; GROUND STATE; READOUT SYSTEMS;

ALL-OPTICAL READ-OUT DEVICES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0347895064     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1532546     Document Type: Article

References (26)

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25. As for point contacts, though, since both reading schemes are based on Coulomb interaction, the measure outcome could be influenced by the presence of spurious charges in the system.
26. For the effect of an in-plane electric field on excitonic wave functions in GaAs QD see Ref. 5. Recently, significant built-in electric fields have been reported also in InGaAs self-assembled QD (R. Rinaldi, private communication).