Characterization of gallium-doped zinc oxide contact on n-type gallium nitride epitaxial layers

Journal of the Electrochemical Society

Volumn 156, Issue 8, 2009, Pages

  Sheu, J K ^a   Chang, K H ^a   Lee, M L ^b   Huang, J F ^a   Kang, K S ^a   Wang, W L ^a   Lai, W C ^a   Hsueh, T H ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; ANNEALING TEMPERATURES; CAPACITANCE VOLTAGE CHARACTERISTIC; ELECTRICAL CHARACTERISTIC; ELECTRON CONCENTRATION; GA-DOPED ZNO; GAN LAYERS; HEAVY DOPING; LOW RESISTIVITY; NITROGEN ATMOSPHERES; NONLINEAR CURRENT; OHMIC CHARACTERISTICS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SPECIFIC CONTACT RESISTANCES; TUNNELING MECHANISM;

ANNEALING; BIOACTIVITY; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC POTENTIAL; EPITAXIAL FILMS; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; ZINC; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 67650608070     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3153129     Document Type: Article

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