Investigation properties of a-Si1-xCx:H films elaborated by co-sputtering of Si and 6H-SiC

Modern Physics Letters B

Volumn 24, Issue 19, 2010, Pages 2101-2112

  Keffous, Aissa ^a   Cheriet, Abdelhak ^a   Belkacem, Youcef ^a   Manseri, Amar ^a   Gabouze, Noureddine ^a   Kechouane, Mohamed ^b   Brighet, Amer ^b   Boukezzata, Assia ^a   Kaci, Samira ^a   Menous, Isa ^a   Nezzal, Ghania ^b   Guerbous, Lakhdar ^c   Menari, Hamid ^a  

^a L'Unite de Developpement de la Technologie du Silicium   (Algeria)

^b UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE   (Algeria)

^c CENTRE DE RECHERCHE NUCLÉAIRE D ALGER   (Algeria)

Author keywords

amorphous film; luminescence; Silicon carbide; SIMS; sputtering; structure

Indexed keywords

EID: 77955183569     PISSN: 02179849     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217984910024262     Document Type: Article

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