Influence of excitation frequency, temperature, and hydrogen dilution on the stability of plasma enhanced chemical vapor deposited a-Si:H

Journal of Applied Physics

Volumn 84, Issue 7, 1998, Pages 3949-3953

  Platz, R ^a   Wagner, S ^a   Hof, C ^b   Shah, A ^b   Wieder, S ^c   Rech, B ^c  

^a Princeton University   (United States)

^b UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001076246     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368592     Document Type: Article

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