SIMS, RBS and glancing incidence X-ray diffraction studies of thermally annealed Ru/β-SiC interfaces

Applied Surface Science

Volumn 211, Issue 1-4, 2003, Pages 300-307

  Roy, S ^a   Jacob, C ^a   Zhang, M ^b   Wang, S ^b   Tyagi, A K ^c   Basu, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b Case Western Reserve University   (United States)

^c INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

Glancing incidence XRD; RBS; Ru SiC interface; SIMS; Thermal annealing

Indexed keywords

ANNEALING; RUTHENIUM; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

RUTHENIUM SILICIDE;

INTERFACES (MATERIALS);

EID: 0037657452     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00255-1     Document Type: Article

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