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Volumn , Issue , 2010, Pages 219-225

Full characterization of Cu/Cu direct bonding for 3D integration

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATION; AMBIENT AIR; BONDING INTERFACES; CU LINES; DIRECT BONDING; ELECTRICAL CHARACTERIZATION; HIGH DENSITY; INTERFACE RELIABILITY; ROOM TEMPERATURE; SPECIFIC CONTACT RESISTANCES; WAFER STRUCTURE;

EID: 77955211513     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2010.5490904     Document Type: Conference Paper
Times cited : (49)

References (7)
  • 1
    • 33947407658 scopus 로고    scopus 로고
    • Three-dimensional integrated circuits and the future of system-on-chip designs Proceedings
    • June
    • Patti, R.S. "Three-dimensional integrated circuits and the future of system-on-chip designs Proceedings", June 2006, IEEE, Vol.94, Iss.6, pp. 1214-1224
    • (2006) IEEE , vol.94 , Issue.6 , pp. 1214-1224
    • Patti, R.S.1
  • 2
    • 70350613172 scopus 로고    scopus 로고
    • Advanced Module Technology Division, R & D, Taiwan Semiconductor Manufacturing Company
    • Yu C.H., "The third dimension-More Life for Moore's Law", Advanced Module Technology Division, R&D, Taiwan Semiconductor Manufacturing Company (2006)
    • (2006) The Third Dimension-More Life for Moore's Law
    • Yu, C.H.1
  • 5
    • 74449083287 scopus 로고    scopus 로고
    • Physics of direct bonding: Applications to 3D heterogeneous or monolithic integration
    • P. Gueguen, C. Ventosa, L. Di Cioccio et al, "Physics of direct bonding: Applications to 3D heterogeneous or monolithic integration", Journal of Microelectronics Engineering, 2010, Vol 87 pp.477-484
    • (2010) Journal of Microelectronics Engineering , vol.87 , pp. 477-484
    • Gueguen, P.1    Ventosa, C.2    Di Cioccio, L.3
  • 6
    • 69549129575 scopus 로고    scopus 로고
    • Copper direct-bonding characterization and its interests for 3D integration
    • P. Gueguen, L. Di Cioccio et al, "Copper Direct-Bonding Characterization and Its Interests for 3D Integration", Journal of the Electrochemical Society, 2009, 156(10) H772-H776
    • (2009) Journal of the Electrochemical Society , vol.156 , Issue.10
    • Gueguen, P.1    Di Cioccio, L.2
  • 7
    • 0014630193 scopus 로고
    • Electromigration failure modes in Aluminum metallization for semiconductor devices
    • J.R Black, "Electromigration failure modes in Aluminum metallization for semiconductor devices" Proc IEEE, 1969, Vol.57, no9, pp. 1587-1594.
    • (1969) Proc IEEE , vol.57 , Issue.9 , pp. 1587-1594
    • Black, J.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.