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Volumn 1112, Issue , 2009, Pages 81-89

3D vertical interconnects by copper direct bonding

Author keywords

[No Author keywords available]

Indexed keywords

3D APPLICATION; 4-POINT PROBE; AMBIENT AIR; BONDING TOUGHNESS; CONTACT SURFACE; COPPER DIRECT BONDING; KELVIN STRUCTURES; LOW-POWER CONSUMPTION; MEASUREMENT TECHNIQUES; METAL BONDING; ROOM TEMPERATURE; THROUGH SILICON VIAS; TRANSMISSION SPEED; VIA TECHNOLOGIES;

EID: 70449565336     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (12)

References (17)
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  • 5
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    • Bonding Parameters of Blanket Copper Wafer Bonding
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  • 6
    • 30544440375 scopus 로고    scopus 로고
    • J.J. McMahon, F. Niklaus, R.J. Kumar et al, CMP Compatibility of Partially Cured Benzocyclobutene (BCB)for Via-First 3D IC Process, Mat. Res. Soc. 2005, Symp. Proc. p. 61-68 (2005).
    • J.J. McMahon, F. Niklaus, R.J. Kumar et al, "CMP Compatibility of Partially Cured Benzocyclobutene (BCB)for Via-First 3D IC Process", Mat. Res. Soc. 2005, Symp. Proc. p. 61-68 (2005).
  • 7
    • 24644443831 scopus 로고    scopus 로고
    • A. Shigetou, T. Itoch, T. Suga, Electrical Performance and Reliability of Fine-Pitch Cu Bumpless Interconnect, ECTC 2005, proc p. 1114-1118 (2005)
    • A. Shigetou, T. Itoch, T. Suga, "Electrical Performance and Reliability of Fine-Pitch Cu Bumpless Interconnect", ECTC 2005, proc p. 1114-1118 (2005)
  • 8
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    • P. Enquist, Direct Bond Technology for 3-D IC Applications RTI conference proceeding. 64 (10), 4943-4950 (2007).
    • P. Enquist, "Direct Bond Technology for 3-D IC Applications" RTI conference proceeding. 64 (10), 4943-4950 (2007).
  • 9
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    • Electromigration of Cu-Sn-Cu Micropads in 3D Interconnect
    • P
    • Z. Huang, R. Chatterjee, P. Justison et al, "Electromigration of Cu-Sn-Cu Micropads in 3D Interconnect" ECTC, proc. P. 12 (2008)
    • (2008) ECTC, proc , pp. 12
    • Huang, Z.1    Chatterjee, R.2    Justison, P.3
  • 10
    • 50949114112 scopus 로고    scopus 로고
    • Resistance to electromigration of purely intermetallic micro-bump interconnections for 3D-device stacking
    • P
    • R. Labie, W. Ruythooren, K. Baert et al, "Resistance to electromigration of purely intermetallic micro-bump interconnections for 3D-device stacking" IITC, proc. P. 19 (2008)
    • (2008) IITC, proc , pp. 19
    • Labie, R.1    Ruythooren, W.2    Baert, K.3
  • 11
    • 33847764691 scopus 로고    scopus 로고
    • New Developments in Electron Energy Loss Spectroscopy
    • V.J Keast, M. Bosman, "New Developments in Electron Energy Loss Spectroscopy" Microscopy Research and Technique 70: 211-219 (2007)
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    • Keast, V.J.1    Bosman, M.2
  • 12
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    • Bonding of silicon wafers for silicon-on-insulator
    • W.P. Maszara, G. Goetz, A. Caviglia et al, "Bonding of silicon wafers for silicon-on-insulator" J. Appl. Phys. 64 (10), 4943-4950. (1988)
    • (1988) J. Appl. Phys , vol.64 , Issue.10 , pp. 4943-4950
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  • 13
    • 39049084282 scopus 로고    scopus 로고
    • Mixed-mode interface toughness of wafer-level Cu-Cu bonds using asymmetric chevron test
    • R. Tadepalli, K.T. Turner, C.V. Thompson, "Mixed-mode interface toughness of wafer-level Cu-Cu bonds using asymmetric chevron test", J Mech Phys Solids, Vol. 56, iss. 3, p. 707-718 (2007).
    • (2007) J Mech Phys Solids , vol.56 , Issue.ISS. 3 , pp. 707-718
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  • 14
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    • Accurate characterization of wafer bond toughness with the double cantilever specimen
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    • Turner, K.T.1    Spearing, S.M.2
  • 15
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  • 16
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.